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Número de pieza
componentes Descripción
IXTN21N100 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTN21N100
High Voltage MegaMOS™ FETs
IXYS CORPORATION
IXTN21N100 Datasheet PDF : 4 Pages
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2
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IXTK 21N100
IXTN 21N100
Fig.7 Gate Charge Characteristic Curve
10
9
V
DS
= 500V
8
I
D
= 12A
I
G
= 10mA
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300
Gate Charge - nCoulombs
Fig.9 Source Current vs. Source
to Drain Voltage
40
35
30
25
20
T
J
= 125
°
C
15
T
J
= 25
°
C
10
5
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
- Volts
Fig.10 Transient Thermal Impedance
1
Fig.8 Capacitance Curves
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
C
iss
f = 1 MHz
V
DS
= 25V
C
oss
C
rss
5
10
15
20
V
DS
- Volts
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single pulse
D = Duty Cycle
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4
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