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Número de pieza
componentes Descripción
DG306AE25(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG306AE25
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG306AE25 Datasheet PDF : 19 Pages
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DG306AE25
600
Conditions:
500
T
j
= 125˚C
I
FGM
= 20A
Cs = 1.0
µ
F
400 Rs = 10 Ohms
dI
T
/dt = 300A/
µ
s
300
V
D
= 2000V
200
V
D
= 1500V
100
V
D
= 1000V
0
0
100
200
300
400
500
600
On-state current - (A)
Fig.10 Turn-on energy vs on-state current
700
550
Conditions:
Conditions:
650
I
T
= 600A
T
j
= 125˚C
500
I
T
= 600A
T
j
= 125˚C
Cs = 1.0µF
Cs = 1.0
µ
F
600
Rs = 10 Ohms
450 Rs = 10 Ohms
dI
T
/dt = 300A/µs
I
FGM
= 20A
V
D
= 2000V
550
dI
FG
/dt = 20A/µs
400
500
350
V
D
= 1500V
450
300
V
D
= 2000V
400
250
V
D
= 1000V
350
V
D
= 1500V
200
300
150
250
V
D
= 1000V
100
200
0
10 20 30 40 50 60 70 80
Peak forward gate current I
FGM
- (A)
50
0 50 100 150 200 250 300
Rate of rise of on-state current dI
T
/dt
- (A/
µ
s)
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Turn-on energy vs rate of rise of on-state current
8/19
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