DG306AE25(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG306AE25
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG306AE25

CURVES

2.0

2.0

1.5

1.5

1.0

1.0

0.5

VGT 0.5

IGT

0

0

-50 -25 0 25 50 75 100 125

Junction temperature Tj - (˚C)

Fig.1 Gate trigger voltage/curremt vs junction temperature

2000

1500

Measured under pulse

conditions

IG(ON) = 2A

Half sine wave 10ms

1000

Tj = 25˚C

Tj = 125˚C

500

0

0

1.0

2.0

3.0

4.0

5.0

6.0

Instantaneous on-state voltage - (V)

Fig.2 Maximum limit on-state characteristics

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