DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AR609LTS06 Ver la hoja de datos (PDF) - Power Semiconductors

Número de pieza
componentes Descripción
Fabricante
AR609LTS06
POSEICO
Power Semiconductors POSEICO
AR609LTS06 Datasheet PDF : 4 Pages
1 2 3 4
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
FINAL SPECIFICATION
set 02 - ISSUE : 04
Symbol Characteristic
AR609LT
Repetitive voltage up to
Mean forward current
Surge current
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V=VRRM
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
4500 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR609LT S 06
standard specification
VRRM/100
600 V
6825 A
60 kA
Tj
[°C]
Value
Unit
190 600
V
190 700
V
190
75
mA
6825
A
7585
A
190
60
kA
18000 x 1E3 A²s
25 1.05
V
190 0.73
V
190 0.035
mohm
µs
190
µC
A
15
°C/kW
5
°C/kW
-30 / 190
°C
22.0 / 24.5 kN
200
g

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]