MGF0913A Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
MGF0913A Datasheet PDF : 4 Pages
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< High-power GaAs FET (small signal gain stage) >
MGF0913A
L & S BAND / 1.2W
SMD non - matched
MGF0913A TYPICAL CHARACTERISTICS
Po,G p,P A E vs.P in
35
Vds=10V
30
Ids(off)=200mA
Po
f=1.9GHz
25
20
PAE
15
Gp
10
5
0
0
5
10
15
20
Pin (d B m )
70
60
50
40
30
20
10
0
25
IM3,Po(SCL) vs. Pi(SCL)
40
VD=10V
30 ID=200mA
f1=1.90GHz
Po
20 f2=1.91GHz
10
0
-10
-20
IM3
-30
-40
-50
-15 -10
-5
0
5
10
15
Pi(SCL) (dBm)
10
0
-10
-20
-30
-40
-50
-60
-70
-80
20
Publication Date : Apr., 2011
2
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