MGA-83563-TR1 Ver la hoja de datos (PDF) - HP => Agilent Technologies
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MGA-83563-TR1 Datasheet PDF : 24 Pages
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MGA-83563 Electrical Specifications, Vd = 3 V, TC = 25°C, using test circuit of Figure 2, unless noted.
Std.
Symbol
Parameters and Test Conditions
Units Min. Typ. Max. Dev.[4]
PSAT
PAE [3]
Saturated Output Power[3]
Power Added Efficiency
f = 2.4 GHz dBm 20.5 22.4
0.75
f = 2.4 GHz %
25
37
2.5
Id[5]
Gain
Device Current
Small Signal Gain
mA
f = 0.9 GHz dB
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
152
200
12.4
20
22
23
22
22
19
17
PSAT
Saturated Output Power
f = 0.9 GHz dBm
20.9
f = 1.5 GHz
21.7
f = 2.0 GHz
21.8
f = 2.4 GHz
22
f = 4.0 GHz
21.9
f = 5.0 GHz
19.7
f = 6.0 GHz
18.2
PAE
Power Added Efficiency
f = 0.9 GHz %
41
f = 1.5 GHz
41
f = 2.0 GHz
40
f = 2.4 GHz
37
f = 4.0 GHz
32
f = 5.0 GHz
18
f = 6.0 GHz
14
P1 dB[5] Output Power at 1 dB Gain Compression f = 0.9 GHz dBm
19.1
f = 1.5 GHz
19.7
f = 2.0 GHz
19.7
f = 2.4 GHz
19.2
f = 4.0 GHz
18.1
f = 5.0 GHz
16
f = 6.0 GHz
15
VSWRin Input VSWR into 50 Ω
Circuit A
f = 0.9 to 1.7 GHz
3.5
f = 1.8 to 3.0 GHz
2.6
Circuit B
f = 3.0 to 6.0 GHz
2.3
VSWRout Output VSWR into 50 Ω
Circuit A
f = 0.9 to 2.0 GHz
1.4
f = 2.0 to 3.0 GHz
2.5
Circuit B
f = 3.0 to 4.0 GHz
3.5
f = 4.0 to 6.0 GHz
4.5
ISOL Isolation
f = 0.9 to 3.0 GHz dB
-38
f = 3.0 to 6.0 GHz
-30
IP3
Third Order Intercept Point
f = 0.9 GHz to 6.0 GHz dBm
29
Notes:
3. Measured using the final test circuit of Figure 1 with an input power of +4 dBm.
4. Standard Deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
5. For linear operation, refer to thermal sections in the Applications section of this data sheet.
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