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Número de pieza
componentes Descripción
MG300Q2YS65H Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
MG300Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba
MG300Q2YS65H Datasheet PDF : 6 Pages
1
2
3
4
5
6
Switching time – I
C
1
Common emitter
VCC
=
600 V
VGE
= ±
15 V
Rg
=
2.7
W
ton
0.1
td (on)
0.01
10
tr
: Tc
=
25°C
: Tc
=
125°C
100
Collector current I
C
(A)
1000
MG300Q2YS65H
Switching time – I
C
1
toff
td (off)
0.1
0.01
10
: Tc
=
25°C
: Tc
=
125°C
tf
100
Common emitter
VCC
=
600 V
VGE
= ±
15 V
RG
=
2.7
W
1000
Collector current I
C
(A)
Switching time – R
G
1
ton
0.1
tr
td (on)
0.01
1
: Tc
=
25°C
: Tc
=
125°C
10
Common emitter
VCC
=
600 V
IC
=
300 A
VGE
= ±
15 V
100
Gate resistance R
G
(
9
)
Switching time – R
G
10
toff
1
td (off)
0.1
0.01
1
tf
: Tc
=
25°C
: Tc
=
125°C
10
Common emitter
VCC
=
600 V
IC
=
300 A
VGE
= ±
15 V
100
Gate resistance R
G
(
9
)
Switching loss – I
C
100
: Tc
=
25°C
: Tc
=
125°C
Eon
Eoff
10
Edsw
Common emitter
VCC
=
600 V
VGE
= ±
15 V
RG
=
2.7
W
1
10
100
1000
Collector current I
C
(A)
Switching loss – R
G
100
Eon
Eoff
10
Edsw
: Tc
=
25°C
: Tc
=
125°C
1
1
10
Common emitter
VCC
=
600 V
IC
=
300 A
VGE
= ±
15 V
100
Gate resistance R
G
(
9
)
4
2003-03-11
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