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Número de pieza
componentes Descripción
MG300Q2YS60A Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
MG300Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba
MG300Q2YS60A Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
I
rr
, t
rr
– I
F
1000
trr
100
Irr
Common cathode
VCC
=
600 V
RG
=
6.8
W
Tj
=
25°C
VGE
= ±
15 V
Tj
=
125°C
10
0
50
100
150
200
250
300
Forward current I
F
(A)
100000
10000
C – V
CE
Cies
Coes
1000 Common emitter
VGE
=
0 V
f
=
1 MHz
Tj
=
25°C
100
0.01
0.1
1
Cres
10
100
Collector-emitter voltage V
CE
(V)
MG300Q2YS60A
E
dsw
– I
F
100
10
1
Common cathode
VCC
=
600 V
RG
=
6.8
W
Tj
=
25°C
VGE
= ±
15 V
Tj
=
125°C
0.1
0
50
100
150
200
250
300
Forward current I
F
(A)
Safe-operating area
1000
IC max (pulsed)
*
IC max (continuous)
100
m
s
*
100
*
: Single
nonrepetitive
pulse Tc
=
25°C
Curves must
10
be derated
linearly with
increase in
3
temperature.
1
10
50
m
s
*
1 ms
*
DC
operation
100
1000
Collector-emitter voltage V
CE
(V)
10000
Reverse bias SOA
1000
100
10
Tj
<=
125°C
RG
=
6.8
W
VGE
= ±
15 V
1
0
400
800
1200
Collector-emitter voltage V
CE
(V)
1
Tc
=
25°C
0.1
0.01
R
th
– t
w
Diode stage
Transistor stage
0.001
0.001
0.01
0.1
1
10
Pulse width t
w
(s)
8
2002-09-06
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