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Número de pieza
componentes Descripción
MG300Q2YS60A Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
MG300Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba
MG300Q2YS60A Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
I
F
– V
F
600
Common cathode
VGE
=
0 V
500
400
300
125°C
200
Tj
=
25°C
-
40°C
100
0
0
1
2
3
4
5
Forward voltage V
F
(V)
MG300Q2YS60A
V
CE
, V
GE
– Q
G
1000
20
Common emitter
RL
=
2
W
Tj
=
25°C
800
16
600
400 V
12
600 V
400
200 V
8
VCE
=
0 V
200
4
0
0
0
500
1000
1500
2000
2500
Charge Q
G
(nC)
10000
SW time – R
G
toff
1000
td (off)
ton
td (on)
tr
100
Common emitter
tf
VCC
=
600 V
IC
=
300 A
Tj
=
25°C
VGE
= ±
15 V
Tj
=
125°C
10
0
5
10
15
20
25
Gate resistance R
G
(
9
)
E
on
, E
off
– R
G
1000
Common emitter
VCC
=
600 V
IC
=
300 A
Tj
=
25°C
VGE
= ±
15 V
Tj
=
125°C
Eon
100
Eoff
10
0
5
10
15
20
25
Gate resistance R
G
(
9
)
10000
SW time – I
C
toff
1000
td (off)
ton
100
10
0
tf
td (on)
tr
50
Common emitter
VCC
=
600 V
RG
=
6.8
W
VGE
= ±
15 V
100
150
200
Tj
=
25°C
Tj
=
125°C
250
300
Collector current I
C
(A)
E
on
, E
off
– I
C
100
Eoff
10
Eon
Common emitter
VCC
=
600 V
RG
=
6.8
W
Tj
=
25°C
VGE
= ±
15 V
Tj
=
125°C
1
0
50
100
150
200
250
300
Collector current I
C
(A)
7
2002-09-06
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