MG150Q2YS51 Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

MG150Q2YS51

Silicon N Channel IGBT GTR Module

Toshiba 

MG150Q2YS51

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Gate leakage current

Collector cut-off current

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Input capacitance

Switching time

Forward voltage

Turn-on delay time

Rise time

Turn-on time

Turn-off delay time

Fall time

Turn-off time

Reverse recovery time

Thermal resistance

IGES

ICES

VGE (off)

VCE (sat)

Cies

td(on)

tr

ton

td(off)

tf

toff

VF

trr

Rth (j-c)

VGE = ±20V, VCE = 0

―

VCE = 1200V, VGE = 0

―

IC = 150mA, VCE = 5V

3.0

IC = 150A,

Tj = 25°C

―

VGE = 15V

Tj = 125°C

―

VCE = 10V, VGE = 0, f = 1MHz

―

―

Inductive load

VCC = 600V

IC = 150A

VGE = ±15V

RG = 5.6Ω

―

―

―

(Note 1) ―

―

IF = 150A, VGE = 0

―

IF = 150A, VGE = −10V

di / dt = 700A / µs

(Note 1)

―

Transistor stage

―

Diode stage

―

Note 1: Switching time and reverse recovery time test circuit & timing chart

Typ. Max Unit

― ±500 nA

―

2.0 mA

―

6.0

V

2.8

3.6

V

3.1

4.0

18.0 ―

nF

0.05 ―

0.05 ―

0.2

―

µs

0.5

―

0.1

0.3

0.6

―

2.4

3.5

V

0.1 0.25 µs

―

0.1

°C / W

― 0.24

2

2001-04-16

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