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MEJ02C2016_M5M5J167KT Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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MEJ02C2016_M5M5J167KT
Hitachi
Hitachi -> Renesas Electronics Hitachi
MEJ02C2016_M5M5J167KT Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Jan.10,2003 Ver. 2.1
M5M5J167KT - 70HI
MITSUBISHI LSIs
16777216-BIT (1048576-WORD BY 16-BIT / 2097152-WORD BY 8-BIT) CMOS STATIC RAM
FUNCTION
The M5M5J167KT is organized as 1048576-words by 16-
bit / 2097152-words by 8-bit. These dev ices operate on a
single +2.7~3.6V power supply , and are directly TTL
compatible to both input and output. Its f ully static circuit
needs no clocks and no ref resh, and makes it usef ul.
The operation mode are determined by a combination of
the dev ice control inputs BC1# , BC2# , S1#, S2 , W#,
OE# and BY TE#. Each mode is summarized in the f unction
table. The address select A19 can select either one
8MSRAM chip or another 8MSRAM chip.
A write operation is executed whenev er the low lev el W#
ov erlaps with the low lev el BC1# and/or BC2# and the low
lev el S1# and the high lev el S2. The address (A-1~A19 :
By te mode, A0~A19 : Word mode) must be set up bef ore
the write cy c le and must be stable during the entire cy cle.
A read operation is executed by s etting W# at a high
lev el and OE# at a low lev el while BC1# and/or BC2# and
S1#and S2 are in an activ e state (S1#=L, S2=H).
When setting BYTE# at a low lev el, the f unction will be
in the x8 mede, which is, DQ1-8 are av ailable and DQ9-16
are not av ailable. In the x8 mode, A-1 is used as the
additional address. During the activ e f unction f or x8 mode,
BC1# BC2# must be low lev el.
When setting BC1# and BC2# at a high lev el or S1# at
a high lev el or S2 at a low lev el, the chips are in a non-
selectable mode in which both reading and writing are
disabled.
In this mode, the output stage is in a high-impedance state,
allowing OR-tie with other chips and memory expansion by
BC1#, BC2# and S1#, S2.
The power supply c urrent is reduced as low as 0.2µA
(25°C, ty pical), and the memory data can be held at +2.0V
power supply , enabling battery back-up operation during
power f ailure or power-down operation in the non-selected
mode.
FUNCTION TABLE
S1# S2 BYTE# BC1# BC2# W# OE#
Mode
H
H
X
X
X
X
X Non selection
X
L
X
X
X
X
X Non selection
X
X
H
H
H
X
X Non selection
L
H
H
L
H
L
X
Write
L
H
H
L
H
H
L
Read
L
H
H
L
H
H
H
-------
L
H
HH
L
L
X
Write
L
H
H
H
L
H
L
Read
L
H
H
H
L
H
H
-------
L
H
H
L
L
L
X
Write
L
H
H
L
L
H
L
Read
L
H
H
L
L
H
H
-------
L
H
L
L
L
L
X
Write
L
H
L
L
L
H
L
Read
L
H
L
L
L
H
H
-------
Note1 : "H" and "L" in this table mean VIH and VIL, respectiv ely .
Note2 : "X" in this table should be "H" or "L".
DQ1~8 DQ9~15 DQ16
High-Z High-Z High-Z
High-Z High-Z High-Z
High-Z High-Z High-Z
Din High-Z High-Z
Dout High-Z High-Z
High-Z High-Z High-Z
High-Z Din
Din
High-Z Dout Dout
High-Z High-Z High-Z
Din
Din
Din
Dout Dout Dout
High-Z High-Z High-Z
Din High-Z A-1
Dout High-Z A-1
High-Z High-Z A-1
Icc
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
2

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