MCR310-8G Ver la hoja de datos (PDF) - ON Semiconductor
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MCR310-8G
ON Semiconductor
MCR310-8G Datasheet PDF : 3 Pages
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MCR310 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward Blocking Current(1)
(TJ = 110°C, VD = Rated VDRM)
Peak Reverse Blocking Current(1)
(TJ = 110°C, VR = Rated VRRM)
TC = 110°C
TC = 25°C
TC = 110°C
TC = 25°C
IDRM
IRRM
—
—
500
mA
—
—
10
mA
—
—
500
mA
—
—
10
mA
On-State Voltage
VTM
(ITM = 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
Gate Trigger Current, Continuous dc(2)
IGT
(VD = 12 V, RL = 100 Ω)
—
1.7
2.2
Volts
—
30
200
mA
Gate Trigger Voltage, Continuous dc
(VD = 12 V, RL = 100 Ω)
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)
VGT
Volts
—
0.5
1.5
0.1
—
—
Holding Current
(VD = 12 V, ITM = 100 mA)
IH
—
—
6
mA
Critical Rate of Rise of Forward Blocking Voltage
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform)
dv/dt
—
10
—
V/ms
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 20 A, IG = 2 mA)
tgt
—
1
—
ms
1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. Does not include RGK current.
120
20
110
100
90
80
70
0
α
α = CONDUCTION ANGLE
α = 30°
60
°
90°
180°
dc
2
4
6
8
10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 1. Average Current Derating
dc
16
α
α = CONDUCTION ANGLE
12
180°
90
8
α = 30° 60° °
4
0
0
2
4
6
8
10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
3
2
VD = 12 Vdc
1
0.5
0.3
−40 −20 0 20 40 60 80 90 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Normalized Gate Current
0.7
VD = 12 Vdc
0.6
0.5
0.4
0.3
0.2
0.1
−60 −40 −20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Gate Voltage
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