MCR12L(2008) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

MCR12L
(Rev.:2008)

Silicon Controlled Rectifiers Reverse Blocking Thyristors

ON Semiconductor 

MCR12LD, MCR12LM, MCR12LN

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol

VDRM

IDRM

VRRM

IRRM

VTM

IH

Parameter

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak On State Voltage

Holding Current

IRRM at VRRM

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

VTM

IH

+ Voltage

IDRM at VDRM

Forward Blocking Region

(off state)

10

9

8

7

6

5

4

3

2

1

0

-40 -25 -10

5.0 20 35 50 65 80 95

TJ, JUNCTION TEMPERATURE (°C)

110 125

Figure 1. Typical Gate Trigger Current

versus Junction Temperature

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

-40 -25 -10 5.0 20 35 50 65 80 95 110 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 2. Typical Gate Trigger Voltage

versus Junction Temperature

100

100

10

10

1.0

-40 -25 -10 5.0 20 35 50 65 80 95 110 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current

versus Junction Temperature

1.0

-40 -25 -10 5.0 20 35 50 65 80 95 110 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Typical Latching Current

versus Junction Temperature

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