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MCR100G-4AD-AE3-K
Unisonic Technologies
MCR100G-4AD-AE3-K Datasheet PDF : 6 Pages
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UNISONIC TECHNOLOGIES CO., LTD
MCR100
SCR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Peak Repetitive Off-State Voltage(Note 1) MCR100-4
200
V
(TJ=-40 ~ 110°С, Sine Wave, 50 ~ 60Hz; MCR100-6
VDRM,VRRM
400
V
Gate Open)
MCR100-8
600
V
On-Sate RMS Current (Tc=80°С) 180°С Condition Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, TJ=25°С)
Circuit Fusing Considerations (t=8.3 ms)
ITSM
10
A
I2t
0.415
A2s
Forward Peak Gate Power (TA=25°С, Pulse Width ≤1.0µs)
PGM
0.1
W
Forward Average Gate Power (TA=25°С, t=8.3ms)
PG(AV)
0.1
W
Peak Gate Current – Forward (TA=25°С, Pulse Width≤1.0μs)
IGM
1
A
Peak Gate Voltage – Reverse (TA=25°С, Pulse Width≤1.0μs) VGRM
5
V
Operating Junction Temperature Range
(Rated VRRM and VDRM)
TJ
-40 ~ +110
°С
Storage Temperature Range
TSTG
-40 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-92
SOT-23/SOT-89
SYMBOL
θJA
MAX
200
400
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise stated)
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current
TC=25°С
TC=125°С
IDRM,
IRRM
VD=Rated
RGK=1kΩ
VDRM
and
VRRM;
10 μA
100 μA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
Gate Trigger Current (Continuous DC)(Note3)
VTM ITM=1A Peak @ TA=25°С
IGT VAK=7Vdc, RL=100Ω, TC=25°С
1.7 V
40 200 μA
Holding Current (Note 4)
TC=25°С
TC=-40°С
IH
VAK=7Vdc, initiating
current=20mA
0.5 5 mA
10 mA
Latch Current
TC=25°С
TC=-40°С
IL VAK=7V, Ig=200μA
0.6 10 mA
15 mA
Gate Trigger Voltage (continuous TC=25°С
dc) (Note 3)
TC=-40°С
VGT VAK=7Vdc, RL=100Ω
0.62 0.8 V
1.2 V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
Critical Rate of Rise of On-State Current
VD=Rated VDRM, Exponential
dV/dt Waveform, RGK=1000Ω,
20 35
V/μs
TJ=110°С
di/dt
IPK=20A; Pw=10μsec;
diG/dt=1A/μsec, Igt=20mA
50 A/μs
Notes: 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
2. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
3. RGK=1000Ω included in measurement.
4. Does not include RGK in measurement
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