MCR100-006G Ver la hoja de datos (PDF) - ON Semiconductor

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MCR100-006G

Sensitive Gate Silicon Controlled Rectifiers

ON Semiconductor 

MCR100 Series

ORDERING INFORMATION

Device

Package Code

Shipping†

MCR100−003

MCR100−004

MCR100−006

5000 Units / Bulk

MCR100−008

MCR100−3RL

MCR100−6RL

TO−92 (TO−226)

2000 Units / Tape & Reel

MCR100−6RLRA

MCR100−6RLRM

MCR100−6ZL1

2000 Units / Tape & Ammunition Box

MCR100−8RL

2000 Units / Tape & Reel

MCR100−003G

MCR100−006G

5000 Units / Bulk

MCR100−008G

MCR100−3RLG

MCR100−6RLG

MCR100−6RLRAG

TO−92 (TO−226)

(Pb−Free)

2000 Units / Tubes

2000 Units / Tape & Reel

MCR100−6RLRMG

MCR100−6ZL1G

2000 Units / Tape & Ammunition Box

MCR100−8RLG

2000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

VDRM,

V

(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)

VRRM

MCR100−3

100

MCR100−4

200

MCR100−6

400

MCR100−8

600

On-State RMS Current, (TC = 80°C) 180° Conduction Angles

IT(RMS)

0.8

A

Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)

ITSM

10

A

Circuit Fusing Consideration, (t = 8.3 ms)

I2t

0.415

A2s

Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms)

PGM

0.1

W

Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)

PG(AV)

0.10

W

Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms)

IGM

1.0

A

Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms)

VGRM

5.0

V

Operating Junction Temperature Range @ Rate VRRM and VDRM

TJ

−40 to 110

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

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