MCM69D618 Ver la hoja de datos (PDF) - Motorola => Freescale
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MCM69D618 Datasheet PDF : 14 Pages
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PACKAGE THERMAL CHARACTERISTICS (See Note 1)
Rating
Symbol
TQFP
Unit Notes
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
RθJA
40
°C/W
2
25
Junction to Board (Bottom)
RθJB
17
°C/W
3
Junction to Case (Top)
RθJC
9
°C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ± 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND SUPPLY CURRENTS
Parameter
Symbol
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (E = VIH, Vout = 0 to VDD)
AC Supply Current (Iout = 0 mA) (VDD = max, f = fmax)
MCM69D618–6 ns
MCM69D618–8 ns
VDD
VIH
VIL
Ilkg(I)
Ilkg(O)
IDDA
CMOS Standby Supply Current (Deselected, Clock (K) MCM69D618–6 ns
Cycle Time ≥ tKHKH, All Inputs Toggling at CMOS Levels MCM69D618–8 ns
Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
* VIL ≥ –1.5 V for t ≤ tKHKH/2.
** VIH ≤ VDD + 1.0 V for t ≤ tKHKH/2.
ISB1
VOL
VOH
Min
3.135
2.0
– 0.5*
—
—
—
—
—
—
—
2.4
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to + 70°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Address and Data Input Capacitance
Control Pin Input Capacitance
Output Capacitance
Cin
Cin
Cout
Max
Unit
3.465
V
VDD + 0.5**
V
0.8
V
± 1.0
µA
± 1.0
µA
300
mA
300
100
mA
100
0.4
V
VDD
V
Max
Unit
6
pF
6
pF
8
pF
MCM69D618
6
MOTOROLA FAST SRAM
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