CXD3400 Ver la hoja de datos (PDF) - Sony Semiconductor
Número de pieza
componentes Descripción
Fabricante
CXD3400 Datasheet PDF : 8 Pages
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CXD3400N
Switching Characteristics
Item
Symbol
Conditions
Propagation delay time
Propagation delay time
Propagation delay time
Propagation delay time
Propagation delay time
Propagation delay time
Rise time
Rise time
Rise time
Fall time
Fall time
Fall time
Output noise voltage
Output noise voltage
Output noise voltage
Output noise voltage
TPLM
TPMH
TPLH
TPML
TPHM
TPHL
TTLM
TTMH
TTLH
TTML
TTHM
TTHL
VCLH
VCLL
VCMH
VCML
∗1
∗1
∗1
∗1
∗1
∗1
VL → VM∗1
VM → VH∗1
VL → VH∗1
VM → VL∗1
VH → VM∗1
VH → VL∗1
∗2
∗2
∗2
∗2
∗1 See Switching Waveform.
∗2 See Noise on a Waveform.
Note) Each item is evaluated by Measurement Circuit.
(VDD = 3.3V, VH = 15V, VM = GND, VL = –7.5V)
Min.
Typ. Max. Unit
50
70
100
ns
50
70
100
ns
50
70
100
ns
10
30
50
ns
10
30
50
ns
10
30
50
ns
200
350
500
ns
200
350
500
ns
30
60
90
ns
200
350
500
ns
200
350
500
ns
30
60
90
ns
—
—
1.0
V
—
—
1.0
V
—
—
1.0
V
—
—
1.0
V
Notes on Operation (See Application Circuit.)
1. Be sure to protect against static electricity because this IC is MOS structure.
2. A bypass capacitor (0.1µF or more) is connected between GND and near each power supply (VH, VDD, VL).
3. In order to protect CCD image sensor, input SHT pin output to SUB pin of CCD image sensor after that has
been clamped at VH.
–4–
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