MC74VHC1G126 Ver la hoja de datos (PDF) - ON Semiconductor
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MC74VHC1G126 Datasheet PDF : 6 Pages
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MC74VHC1G126
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
TA = 25°C
TA ≤ 85°C −55 ≤ TA ≤ 125°C
(V) Min Typ Max Min Max Min
Max Unit
VIH
Minimum High−Level
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
VIL
Maximum Low−Level
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
VOH
Minimum High−Level
VIN = VIH or VIL
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
IOH = −50 mA
3.0 2.9 3.0
2.9
2.9
VIN = VIH or VIL
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
VOL
Maximum Low−Level
VIN = VIH or VIL
2.0
0.0 0.1
0.1
Output Voltage
IOL = 50 mA
3.0
0.0 0.1
0.1
VIN = VIH or VIL
4.5
0.0 0.1
0.1
0.1
V
0.1
0.1
VIN = VIH or VIL
IOL = 4 mA
3.0
IOL = 8 mA
4.5
0.36
0.44
0.36
0.44
V
0.52
0.52
IOZ
Maximum 3−State
Leakage Current
VIN = VIH or VIL
5.5
VOUT = VCC or GND
±0.25
±2.5
±2.5 mA
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND 0 to
5.5
±0.1
±1.0
±1.0 mA
ICC
Maximum Quiescent
VIN = VCC or GND
5.5
1.0
20
40
mA
Supply Current
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
Maximum Propagation
Delay,
Input A to Y
(Figures 3. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.5
4.5 7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZH
Maximum Output
Enable Time,
Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1000 W CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.1
4.5 7.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHZ
Maximum Output
Disable Time,
Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1000 W CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W CL = 50 pF
6.5 9.7
8.0 13.2
4.8 6.8
7.0 8.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CIN
Maximum Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Capacitance
4.0 10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ COUT Maximum 3−StateOutput
6.0
Capacitance (Output in
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ High Impedance State)
TA ≤ 85°C −55 ≤ TA ≤ 125°C
Min Max Min
Max Unit
9.5
12.0 ns
13.0
16.0
6.5
8.5
8.5
10.5
9.5
11.5 ns
13.0
15.0
6.0
8.5
8.0
10.5
11.5
14.5 ns
15.0
18.0
8.0
10.0
10.0
12.0
10
10
pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 5)
8.0
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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