MC33341PG Ver la hoja de datos (PDF) - ON Semiconductor
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MC33341PG Datasheet PDF : 19 Pages
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MC33341
MAXIMUM RATINGS
Rating
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Power Supply Voltage (Pin 7)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Voltage Range
Current Sense Input A (Pin 1)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Current Threshold Adjust (Pin 2)
Compensation (Pin 3)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Voltage Sense Input (Pin 5)
Current Sense Input B / Voltage Threshold Adjust (Pin 6)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Drive Output (Pin 8)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Drive Output Source Current (Pin 8)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Thermal Resistance, Junction−to−Air
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ P Suffix, DIP Plastic Package, Case 626
D Suffix, SO−8 Plastic Package, Case 751
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Operating Junction Temperature (Note 1)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Storage Temperature
Symbol
VCC
VIR
Value
16
−1.0 to VCC
Unit
V
V
ISource
RqJA
TJ
Tstg
50
100
178
−25 to +150
−55 to +150
mA
°C/W
°C
°C
NOTE: ESD data available upon request.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested ambient temperature range for the MC33341: Tlow = −25°C, Thigh = +85°C.
ELECTRICAL CHARACTERISTICS (VCC = 6.0 V, TA = 25°C, for min/max values TA is the operating junction temperature range that
applies (Note 1), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT SENSING (Pins 1, 2, 6)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ High−Side Source and Load Sensing Pin 1 to Pin 6 (Pin 1 >1.6 V)
Vth(I HS)
mV
Internally Fixed Threshold Voltage (Pin 2 = VCC)
TA = 25°C
187
197
207
TA = Tlow to Thigh
183
−
211
Externally Adjusted Threshold Voltage (Pin 2 = 0 V)
−
10
−
Externally Adjusted Threshold Voltage (Pin 2 = 200 mV)
−
180
−
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Low−Side Load Sensing Pin 1 to Pin 4 (Pin 1 = 0 V to 0.8 V)
Vth(I LS+)
mV
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Internally Fixed Threshold Voltage (Pin 2 = VCC)
TA = 25°C
194
200
206
TA = Tlow to Thigh
192
−
208
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Externally Adjusted Threshold Voltage (Pin 2 = 0 V)
Externally Adjusted Threshold Voltage (Pin 2 = 200 mV)
−
10
−
−
180
−
Low−Side Source Return Sensing Pin 1 to 4 (Pin 1 = 0 V to −0.2 V) Vth(I LS−)
mV
Internally Fixed Threshold Voltage (Pin 2 = VCC)
TA = 25°C
−195
−201
−207
TA = Tlow to Thigh
−193
−
−209
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Externally Adjusted Threshold Voltage (Pin 2 = 0 V)
Externally Adjusted Threshold Voltage (Pin 2 = 200 mV)
Current Sense Input A (Pin 1)
−
−10
−
−
−180
−
Input Bias Current, High−Side Source and Load Sensing
IIB(A HS)
−
40
−
mA
(Pin 2 = 0 V to VPin 6 V)
Input Bias Current, Low−Side Load Sensing
(Pin 2 = 0 V to 0.8 V)
IIB(A LS+)
−
10
−
nA
Input Resistance, Low−Side Source Return Sensing
(Pin 2 = −0.6 V to 0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Current Sense Input B/Voltage Threshold Adjust (Pin 6)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input Bias Current
Rin(A LS−)
−
10
−
kW
IIB(B)
High−Side Source and Load Current Sensing (Pin 6 > 2.0 V)
Voltage Threshold Adjust (Pin 6 < 1.2 V)
−
20
−
mA
−
100
−
nA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Current Sense Threshold Adjust (Pin 2)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input Bias Current
IIB(I th)
−
10
−
nA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Transconductance, Current Sensing Inputs to Drive Output
gm(I)
−
6.0
−
mhos
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