NLV14517BDWR2G(2014) Ver la hoja de datos (PDF) - ON Semiconductor
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NLV14517BDWR2G Datasheet PDF : 6 Pages
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MC14517B
FUNCTIONAL TRUTH TABLE (X = Don’t Care)
Write
Clock Enable
Data
16−Bit Tap
0
0
X
Content of 16−Bit
Displayed
0
1
X
High Impedance
1
0
X
Content of 16−Bit
Displayed
1
1
X
High Impedance
0
Data entered Content of 16−Bit
into 1st Bit
Displayed
1
Data entered
Data at tap
into 1st Bit entered into 17−Bit
0
X
Content of 16−Bit
Displayed
1
X
High Impedance
32−Bit Tap
Content of 32−Bit
Displayed
High Impedance
Content of 32−Bit
Displayed
High Impedance
Content of 32−Bit
Displayed
Data at tap
entered into 33−Bit
Content of 32−Bit
Displayed
High Impedance
48−Bit Tap
Content of 48−Bit
Displayed
High Impedance
Content of 48−Bit
Displayed
High Impedance
Content of 48−Bit
Displayed
Data at tap
entered into 49−Bit
Content of 48−Bit
Displayed
High Impedance
64−Bit Tap
Content of 64−Bit
Displayed
High Impedance
Content of 64−Bit
Displayed
High Impedance
Content of 64−Bit
Displayed
High Impedance
Content of 64−Bit
Displayed
High Impedance
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
− 55_C
25_C
125_C
Characteristic
VDD
Typ
Symbol Vdc
Min
Max
Min (Note 2) Max
Min
Max Unit
Output Voltage
Vin = VDD or 0
Vin = 0 or VDD
“0” Level
“1” Level
VOL
5.0
−
0.05
−
0
10
−
0.05
−
0
15
−
0.05
−
0
VOH
5.0
4.95
−
4.95
5.0
10
9.95
−
9.95
10
15 14.95
−
14.95
15
0.05
−
0.05 Vdc
0.05
−
0.05
0.05
−
0.05
−
4.95
−
Vdc
−
9.95
−
−
14.95
−
Input Voltage
“0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIL
5.0
−
1.5
−
2.25
10
−
3.0
−
4.50
15
−
4.0
−
6.75
VIH
5.0
3.5
−
3.5
2.75
10
7.0
−
7.0
5.50
15
11
−
11
8.25
Vdc
1.5
−
1.5
3.0
−
3.0
4.0
−
4.0
Vdc
−
3.5
−
−
7.0
−
−
11
−
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Source
Sink
IOH
5.0
–3.0
−
–2.4
–4.2
5.0 –0.64
−
–0.51 –0.88
10
–1.6
−
–1.3
–2.25
15
–4.2
−
–3.4
–8.8
IOL
5.0
0.64
−
0.51
0.88
10
1.6
−
1.3
2.25
15
4.2
−
3.4
8.8
mAdc
−
–1.7
−
−
–0.36
−
−
–0.9
−
−
–2.4
−
−
0.36
− mAdc
−
0.9
−
−
2.4
−
Input Current
Input Capacitance (Vin = 0)
Quiescent Current (Per Package)
Iin
15
Cin
−
IDD
5.0
10
15
−
±0.1
− ±0.00001 ±0.1
−
±1.0 mAdc
−
−
−
5.0
7.5
−
−
pF
−
5.0
−
0.005
5.0
−
150 mAdc
−
10
−
0.010
10
−
300
−
20
−
0.015
20
−
600
Total Supply Current (Note 3, 4)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT
5.0
10
15
IT = (4.2 mA/kHz) f + IDD
IT = (8.8 mA/kHz) f + IDD
IT = (13.7 mA/kHz) f + IDD
mAdc
Three−State Leakage Current
ITL
15
−
±0.1
−
±0.0001 ±0.1
−
±3.0 mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in mA (per package), CL in pF,
V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
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