DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MC14076BDR2G(2014) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MC14076BDR2G
(Rev.:2014)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC14076BDR2G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MC14076B
4-Bit D-Type Register
with Three-State Outputs
The MC14076B 4−Bit Register consists of four D−type flip−flops
operating synchronously from a common clock. OR gated
output−disable inputs force the outputs into a high−impedance state
for use in bus organized systems. OR gated data−disable inputs cause
the Q outputs to be fed back to the D inputs of the flip−flops. Thus they
are inhibited from changing state while the clocking process remains
undisturbed. An asynchronous master root is provided to clear all four
flip−flops simultaneously independent of the clock or disable inputs.
Features
Three−State Outputs with Gated Control Lines
Fully Independent Clock Allows Unrestricted Operation for the
Two Modes: Parallel Load and Do Nothing
Asynchronous Master Reset
Four Bus Buffer Registers
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low−Power TTL Loads or One
Low−Power Schottky TTL Load Over the Rated Temperature
Range
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
SOIC−16
D SUFFIX
CASE 751B
MARKING DIAGRAM
16
14076BG
AWLYWW
1
A
WL, L
YY, Y
WW, W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
MAXIMUM RATINGS (Voltages Referenced to VSS)
Symbol
Parameter
Value
Unit
VDD
Vin, Vout
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
−0.5 to +18.0
V
−0.5 to VDD + 0.5
V
Iin, Iout
Input or Output Current
(DC or Transient) per Pin
±10
mA
PD
Power Dissipation, per Package (Note 1)
TA
Ambient Temperature Range
Tstg
Storage Temperature Range
TL
Lead Temperature
(8−Second Soldering)
500
mW
−55 to +125
°C
−65 to +150
°C
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout
should be constrained to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 8
Publication Order Number:
MC14076B/D

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]