MC-4532CD646XF-A80 Ver la hoja de datos (PDF) - Elpida Memory, Inc

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Fabricante

MC-4532CD646XF-A80

32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4532CD646

32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

EDescription

The MC-4532CD646EF, MC-4532CD646PF and MC-4532CD646XF are 33,554,432 words by 64 bits synchronous

Odynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

L Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 33,554,432 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

P MC-4532CD646EF-A80

CL = 3

125 MHz

6 ns

CL = 2

100 MHz

6 ns

MC-4532CD646EF-A10

CL = 3

100 MHz

6 ns

rCL = 2

77 MHz

7 ns

MC-4532CD646PF-A80

CL = 3

125 MHz

6 ns

CL = 2

100 MHz

6 ns

o MC-4532CD646PF-A10

CL = 3

100 MHz

6 ns

CL = 2

77 MHz

7 ns

MC-4532CD646XF-A80

CL = 3

125 MHz

6 ns

d CL = 2

100 MHz

6 ns

MC-4532CD646XF-A10

CL = 3

100 MHz

6 ns

CL = 2

77 MHz

7 ns

u • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

c • Programmable burst-length (1, 2, 4, 8 and full page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

t • Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0055N10 (1st edition)

(Previous No. M13681EJ5V0DS00)

Date Published January 2001 CP (K)

Printed in Japan

This product became EOL in March, 2004.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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