MBRF10150CT Ver la hoja de datos (PDF) - Tiger Electronic
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MBRF10150CT Datasheet PDF : 2 Pages
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TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF10150CT SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-220F
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
IO
Average rectified output current
Non-Repetitive peak forward surge current
IFSM
8.3ms half sine wave
PD
Power dissipation
RΘJA
Thermal resistance from junction to ambient
Tj
Junction temperature
Tstg
Storage temperature
Value
150
105
10
120
2
50
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
IR=0.1mA
150
V
Reverse current
IR
VR=150V
0.2
mA
Forward voltage
VF
IF=5A
0.85
V
Typical total capacitance
Ctot
VR=5V,f=1MHz
500
pF
A,Jun,2011
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