MBR2535CTL Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

MBR2535CTL

SWITCHMODE Power Rectifier

ON Semiconductor 

MBR2535CTL

MAXIMUM RATINGS (Per Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(TC = 142°C per Diode)

(TC = 142°C per Device)

Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)

VRRM

35

V

VRWM

VR

IF(AV)

A

12.5

25

IFRM

25

A

IFSM

150

A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

IRRM

1.0

A

Storage Temperature Range

Tstg

−65 to +150

°C

Operating Junction Temperature (Note 1)

TJ

−65 to +150

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Controlled Avalanche Energy

Waval

20

mJ

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Maximum Thermal Resistance, Junction−to−Case

Maximum Thermal Resistance, Junction−to−Ambient

Conditions

Min. Pad

Min. Pad

Symbol

RqJC

RqJA

Max

2.0

75.0

Unit

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Instantaneous Forward Voltage (Note 2)

(iF = 25 Amps, Tj = 25°C)

(iF = 12.5 Amps, Tj = 25°C)

(iF = 12.5 Amps, Tj = 125°C)

Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, Tj = 25°C)

(Rated dc Voltage, Tj = 125°C)

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

Symbol

Min

Typical

Max

Unit

vF

V

−

0.51

0.55

−

0.41

0.47

−

0.33

0.41

iR

−

0.8

−

300

mA

5.0

500

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