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MBR2535CTL(2004) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MBR2535CTL
(Rev.:2004)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBR2535CTL Datasheet PDF : 4 Pages
1 2 3 4
MBR2535CTL
SWITCHMODEt
Power Rectifier
The MBR2535CTL employs the Schottky Barrier principle in a
large metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use in low voltage, high frequency
switching power supplies, free wheeling diodes, and polarity
protection diodes.
Features
Very Low Forward Voltage (0.55 V Maximum @ 25 Amps)
Matched Dual Die Construction (12.5 A per Leg or 25 A per Package)
Guardring for Stress Protection
Highly Stable Oxide Passivated Junction
(125°C Operating Junction Temperature)
Epoxy Meets UL 94 V−0 @ 0.125 in
Shipped 50 units per plastic tube
Pb−Free Packages are Available*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS (Per Leg)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
35
V
VRWM
VR
Average Rectified Forward Current
(Rated VR, TC = 110°C)
IF(AV)
12.5
A
Peak Repetitive Forward Current, per Leg
IFRM
25
A
(Rated VR, Sq Wave, 20 kHz, TC = 95°C)
Non−Repetitive Peak Surge Current
IFSM
150
A
(Surge Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
IRRM
1.0
A
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Tstg −65 to +150 °C
Operating Junction Temperature
TJ −65 to +125 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000 V/ms
Controlled Avalanche Energy
Waval
20
mJ
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
December, 2004 − Rev. 3
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 35 VOLTS
1
2, 4
3
4
1
2
3
TO−220AB
CASE 221A
PLASTIC
MARKING DIAGRAM
AY WW
B2535L
AKA
A
= Assembly Location
Y
= Year
WW = Work Week
B2535L = Device Code
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBR2535CTL
TO−220 50 Units/Rail
MBR2535CTLG
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR2535CTL/D

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