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MBRF2045CT(2008) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MBRF2045CT
(Rev.:2008)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBRF2045CT Datasheet PDF : 6 Pages
1 2 3 4 5 6
MBR2045CT, MBRF2045CT
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
1000
900
800
700
600
500
400
300
200
100
0
0
TJ = 25°C
f = 1 MHz
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Typical Capacitance
+150 V, 10 mAdc
2.0 kW
VCC 12 Vdc
12 V
2.0 ms
1.0 kHz
100
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
D.U.T.
+
4.0 mF
2N6277
1.0 CARBON
1N5817
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
http://onsemi.com
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