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MBR20100CTF-G1 Ver la hoja de datos (PDF) - BCD Semiconductor

Número de pieza
componentes Descripción
Fabricante
MBR20100CTF-G1
BCDSEMI
BCD Semiconductor BCDSEMI
MBR20100CTF-G1 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Typical Performance Characteristics
Data Sheet
MBR20100C
100
10
TJ=150oC
1
0.1
T =125oC
J
TJ=25oC
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage(V)
10000
1000
100
10
1
0.1
0.01
1E-3
0
TJ=150oC
T =125oC
J
T =25oC
J
20
40
60
80
100
Percent of Rated Peak Reverse Voltage(%)
Figure 4. Typical Forward Voltage Per Diode
Figure 5. Typical Reverse Current Per Diode
20
18
16
14
12
10
8
6
4
2
0
115 120 125 130 135 140 145 150 155 160
Case Temperature (0°C)
Figure6. Average Forward Current vs.
.
Case Temperature (Square, Per Diode)
Apr. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
5

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