MBR20100CT-M3(2010) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
MBR20100CT-M3 Datasheet PDF : 4 Pages
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New Product
MBR2090CT, MBR20100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage per diode
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
VF (1)
Maximum reverse current per diode
at working peak reverse voltage
TJ = 25 °C
TJ = 100 °C
IR (2)
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
VALUE
0.80
0.65
0.75
100
6.0
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2090CT, MBR20100CT
Typical thermal resistance per diode
RθJA
60
RθJC
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR20100CT-M3/4W
1.88
PACKAGE CODE BASE QUANTITY DELIVERY MODE
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
12
8
4
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
160
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following:
Document Number: 89192
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 30-Nov-10
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