MBR1035 Ver la hoja de datos (PDF) - ON Semiconductor
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componentes Descripción
Fabricante
MBR1035 Datasheet PDF : 6 Pages
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MBR1035, MBR1045
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1035
MBR1045
VRRM
V
VRWM
VR
35
45
Average Rectified Forward Current
(TC = 135°C, Per Device)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TC = 135°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IF(AV)
A
10
IFRM
10
A
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change
(Rated VR)
dv/dt
10,000
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Min. Pad
Min. Pad
Symbol
RqJC
RqJA
Max
2.0
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, Tj = 125°C)
(iF = 20 Amps, Tj = 125°C)
(iF = 20 Amps, Tj = 25°C)
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
Typical
Max
Unit
vF
V
−
0.55
0.57
−
0.67
0.72
−
0.78
0.84
iR
−
5.3
−
0.008
mA
15
0.1
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2
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