MBM29F080A Ver la hoja de datos (PDF) - Fujitsu

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componentes Descripción

Fabricante

MBM29F080A

FLASH MEMORY CMOS 8M (1M ×8) BIT

Fujitsu 

MBM29F080A-55/-70/-90

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s LOGIC SYMBOL

20

A 0 to A 19

8

DQ0 to DQ7

CE

OE

WE

RESET

RY/BY

Table 1 MBM29F080A Pin Configuration

Pin

Function

A0 to A19

Address Inputs

DQ0 to DQ7

Data Inputs/Outputs

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RY/BY

RESET

N.C.

Ready/Busy Output

Hardware Reset Pin/Sector Protection

Unlock

No Internal Connection

VSS

Device Ground

VCC

Device Power Supply

(5.0 V ±10%)

Table 2 MBM29F080A User Bus Operations

Operation

CE OE WE A0 A1 A6

Auto-Select Manufacturer Code (1)

L

L

H

L

L

L

Auto-Select Device Code (1)

L LHHL L

Read (3)

L

L

H

A0

A1

A6

Standby

HXXXXX

Output Disable

L HHX X X

Write (Program/Erase)

L

H

L

A0

A1

A6

Enable Sector Group Protection (2)

L

VID

XXX

Verify Sector Group Protection (2)

L LHLHL

Temporary Sector Group Unprotection X X X X X X

Reset (Hardware)

XXXXXX

A9 DQ0 to DQ7 RESET

VID

Code

H

VID

Code

H

A9

DOUT

H

X HIGH-Z

H

X HIGH-Z

H

A9

DIN

H

VID

X

H

VID

Code

H

X

X

VID

X HIGH-Z

L

Legend: L = VIL, H = VIH, X = VIL or VIH, = Pulse Input. See DC Characteristics for voltage levels.

Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to

Table 6.

2. Refer to the section on Sector Group Protection.

3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

8

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