MBM29BS12DH Ver la hoja de datos (PDF) - Spansion Inc.

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MBM29BS12DH

BURST MODE FLASH MEMORY CMOS 128M (8M × 16) BIT

Spansion Inc. 

MBM29BS/FS12DH15

s FEATURES

• 0.13 µm process technology

• Single 1.8 V read, program and erase (1.65 V to 1.95 V)

• Simultaneous Read/Write operation (Dual Bank)

• FlexBankTM*1

Bank A: 16 Mbit (4 Kwords × 8 and 32 Kwords × 31)

Bank B: 48 Mbit (32 Kwords × 96)

Bank C: 48 Mbit (32 Kwords × 96)

Bank D: 16 Mbit (4 Kwords × 8 and 32 Kwords × 31)

• Enhanced VI/OTM*2 (VCCQ) Feature

Input/ Output voltage generated on the device is determined based on the VI/O level

• High Performance Burst frequency reach at 66 MHz

Burst access times of 11 ns @ 30 pF at industrial temperature range

Asynchronous random access times of 50 ns (at 30 pF)

Synchronous latency of 56 ns with 1.8 V VCCQ for Handshaking mode

• Programmable Burst Interface

Linear Burst: 8, 16, and 32 words with wrap-around

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Minimum 100,000 program/erase cycles

• Sector Erase Architecture

Eight 4 Kwords, two hundred fifty-four 32 Kwords sectors, eight 4 Kwords sectors.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• HiddenROM region

64 words for factory and 64 words for customer of HiddenROM, accessible through a new “HiddenROM Enable”

command sequence

Factory serialized and protected to provide a sector secure serial number (ESN)

• Write Protect Pin (WP)

At VIL, allows protection of “outermost” 4×4 K words on low, high end or both ends of boot sectors, regardless

of sector protection/unprotection status

• Accelerate Pin (ACC)

At VACC, increases program performance. ; all sectors locked when ACC = VIL

• Embedded EraseTM*2 Algorithms

Automatically preprograms and erases the chip or any sector

• Embedded ProgramTM*2 Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready Output (RDY)

In Synchronous Mode, indicates the status of the Burst read.

In Asynchronous Mode, indicates the status of the internal program and erase function.

• Automatic sleep mode

When address remain stable, the device automatically switches itself to low power mode

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• In accordance with CFI (Common Flash Interface)

• Hardware reset pin (RESET)

Hardware method to reset the device for reading array data

*1 : FlexBankTM is a trademark of Fujitsu Limited.

*2 : Embedded EraseTM, Embedded ProgramTM and Enhanced VI/OTM are trademarks of Advanced Micro Devices, Inc.

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