MBR1035 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

MBR1035

Schottky Rectifiers

Fairchild Semiconductor 

MBR1035 - MBR1060

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

12

TO-220AC

PIN 1 +

PIN 2 -

CASE Positive

+

CASE

Schottky Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

1035

Value

1045 1050

VRRM

IF(AV)

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

35

45

50

10

IFSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

Tstg

Storage Temperature Range

TJ

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

150

-65 to +175

-65 to +150

Thermal Characteristics

Symbol

PD

RθJA

RθJL

Parameter

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead

Value

2.0

60

2.0

1060

60

Units

V

A

A

°C

°C

Units

W

°C/W

°C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

VF

Forward Voltage IF = 10 A, TC = 25°C

IF = 10 A, TC = 125°C

IF = 20 A, TC = 25°C

IF = 20 A, TC = 125°C

IR

Reverse Current @ rated VR TA = 25°C

TA = 125°C

IRRM

Peak Repetitive Reverse Surge Current

2.0 us Pulse Width, f = 1.0 KHz

Device

1035 1045

-

0.57

0.84

0.72

1050 1060

0.80

0.70

0.95

0.85

0.1

15

1.0

0.5

Units

V

V

V

V

mA

mA

A

2001 Fairchild Semiconductor Corporation

MBR1035 - MBR1060, Rev. C

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