MAX1984ETP Ver la hoja de datos (PDF) - Maxim Integrated
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MAX1984ETP Datasheet PDF : 17 Pages
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Ultra-High-Efficiency White
LED Drivers
ABSOLUTE MAXIMUM RATINGS
OUT, IN, BITA, BITB, BITC, LD1, LD2, LD3, LD4,
LD5, LD6, LD7, LD8 to GND ................................-0.3V to +6V
LDG to GND........................................................................±0.3V
LX to GND ................................................-0.3V to (VOUT + 0.3V)
SETI, REF, MODE, SEL to GND ...................-0.3V to (VIN + 0.3V)
Continuous Power Dissipation (TA = +70°C)
16-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW
20-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1; VIN = 3.3V, SETI = BITA = BITB = BITC = SEL = IN, MODE = GND, COUT = 4.7µF, CREF = 0.22µF, TA = 0°C to +85°C,
unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
IN Supply Range
IN Undervoltage Lockout Threshold
IN Quiescent Current
IN Shutdown Current
REF Output Voltage
REF Line Regulation
REF Load Regulation
Oscillator Frequency
Oscillator Maximum Duty Cycle
CONDITIONS
50mV typical hysteresis
BITA = BITB = BITC = IN, LD1 to LD8 = GND
BITA = BITB = BITC = GND
IREF = 0
2.7V < VIN < 5.5V
-1µA < IREF < +50µA
MIN
2.7
2.2
1.230
0.8
TYP
2.4
400
0.1
1.250
0.2
5
1
85
MAX
5.5
2.6
600
1
1.270
5
15
1.2
UNITS
V
V
µA
µA
V
mV
mV
MHz
%
OUT Overvoltage Protection (OVP)
Threshold
VLD1 to VLD8 = 50mV, OUT rising, 100mV typical
hysteresis
5.1
5.3
5.5
V
INTERNAL MOSFET SWITCHES
N-Channel MOSFET On-Resistance ILX = 200mA
0.4
0.8
Ω
N-Channel MOSFET Leakage Current
P-Channel MOSFET On-Resistance
P-Channel MOSFET Leakage Current
VLX = 5.5V, BITA = BITB = BITC = GND
ILX = 200mA
LX = GND, VOUT = 5.5V, BITA = BITB = BITC = GND
0.1
1
µA
0.5
1
Ω
0.1
1
µA
MAX1984
0.50 0.65 0.81
N-Channel MOSFET Current Limit
MAX1985
0.40 0.52 0.65
A
MAX1986
0.30 0.39 0.52
CONTROL INPUTS
BITA, BITB, BITC Input Logic Low
Level
2.7V < VIN < 5.5V
0.4
V
BITA, BITB, BITC Input Logic High
Level
2.7V < VIN < 5.5V
1.6
V
MODE Input Logic Low Level
MODE Input Logic High Level
MODE, BITA, BITB, BITC Input Bias
Current
2.7V < VIN < 5.5V
2.7V < VIN < 5.5V
2.7V < VIN < 5.5V
VIN - 0.4
0.4
V
V
0.01
1
µA
2 _______________________________________________________________________________________
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