GaAs SP3T 2.5 V High Power Switch
0.1 - 3.0 GHz
MASWSS0100
V2
Electrical Specifications: TA = 25°C, VC = 0 V / 2.5 V, Z0 = 50 Ω 4
Parameter
Insertion Loss 5
Isolation
Return Loss
P.1dB
2nd Harmonic
3rd Harmonic
Trise, Tfall
Ton, Toff
Transients
Control Current
Test Conditions
0.5 - 1.0 GHz
1.0 - 2.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
0.5 - 2.5 GHz
—
1.0 GHz, PIN = +34 dBm
1.0 GHz, PIN = +34 dBm
10% to 90% RF, 90% to 10% RF
50% control to 90% RF
50% control to 10% RF
In Band
2.5 V
Units
dB
dB
dB
dB
dB
dBm
dBc
dBc
nS
nS
mV
µA
Min.
—
—
23
—
—
—
—
—
—
—
—
—
Typ.
0.5
0.6
25
20
20
38
-80
-70
83
94
58
50
Max.
0.65
—
—
—
—
—
—
-65
—
—
—
80
4. External DC blocking capacitors are required on all RF ports.
5. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.
Functional Diagram
Truth Table 6,7
V1
V2
V3
RFC– RFC- RFC -
RF1 RF2 RF3
1
0
0
On
Off
Off
0
1
0
Off
On
Off
0
0
1
Off
Off
On
6. State 0 = -5 V to +2.5 V, State 1 = -2.5 V to +5 V.
7. Differential voltage, V (state 1) - V (state 0), must be 2.5 V
minimum.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
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