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MAPRST1214-030UF Datasheet PDF : 1 Pages
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Preliminary Datasheet
Revision 01/14/2003
MAPRST1214-030UF
RADAR PULSED POWER TRANSISTOR
30W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle
FEATURES
OUTLINE DRAWING
∗ NPN Silicon Microwave Power Transistor
∗ Common Base Configuration
∗ Broadband Class C Operation
∗ High Efficiency Interdigitated Geometry
∗ Diffused Emitter Ballasting Resistors
∗ Gold Metalization System
∗ Internal Input and Output Impedance Matching
∗ Hermetic Metal/Ceramic Package
∗ Typcial Second Harmonic Level < -30dBc
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation @
+25°C
Junction Temperature
Storage Temperature
VCES
VEBO
IC
PTOT
TJ
TSTG
70
3.0
4.8
145
200
-65 to +200
Units
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown
Voltage
BVCES
70
Collector-Emitter Leakage Current
ICES
-
Thermal Resistance
Output Power
Power Gain
Gain Flatness
Collector Efficiency
RTH
-
POUT
30
GP
7.3
ΔG
-
ηc
45
Input Return Loss
Amplitude Pulse Droop
RL
9
Droop
-
Load Mismatch Stability
VSWR-S
-
Load Mismatch Tolerance
VSWR-T
-
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz)
1200
1300
1400
Z IF (Ω)
6.7 - j6.9
6.5 - j6.5
6.3 - j4.5
Z OF (Ω)
14.3 + j2.4
11.2 - j0.8
7.2 - j0.1
Max
-
2.0
1.2
-
-
1.25
-
-
0.5
1.5:1
3:1
Units
V
mA
°C/W
W
dB
dB
%
dB
dB
-
-
IC = 10 mA
Test Conditions
VCE = 40V
VCC = 36V, Pin = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, Pin = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, Pin = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
1
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