MAC4DLM-1G Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MAC4DLM-1G Datasheet PDF : 7 Pages
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MAC4DLM
5.0
12
4.0
3.0
MT2 NEGATIVE
2.0
MT2 POSITIVE
1.0
0
-40 -25 -10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Holding Current versus
Junction Temperature
10
8.0
Q2
6.0
4.0
Q4
2.0 Q1
Q3
0
-40 -25 -10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 8. Typical Latching Current versus
Junction Temperature
40
35
VD = 400 V
TJ = 110°C
30
25
20
15 MAC4DLM
10
5.0
100
1000
10 K
RGK, GATE-MT1 RESISTANCE (OHMS)
Figure 9. Minimum Exponential Static dv/dt
versus Gate−MT1 Resistance
10
VPK = 400 V
TJ = 110°C 100°C 90°C
1.0
tw
VDRM
1
f=
2 tw
(di/dt)c
=
6f ITM
1000
0.1
0
1.0
2.0
3.0
4.0
5.0
6.0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 10. Critical Rate of Rise of
Commutating Voltage
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
CL
LL
MEASURE
I
RS
1N4007
CS
MT2
1N914 51 W
MT1
G
-
ADJUST FOR +
di/dt(c)
200 V
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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