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MAC212A10 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MAC212A10
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MAC212A10 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MAC212A8, MAC212A10
THERMAL CHARACTERISTICS
Thermal Resistance,
r
Characteristic
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Secs
Symbol
RqJC
RqJA
TL
Value
2.0
62.5
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = +125°C
IDRM,
IRRM
10
2.0
ON CHARACTERISTICS
Peak On-State Voltage
ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VTM
1.3
1.75
IGT
12
50
12
50
20
50
35
75
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VGT
0.9
2.0
0.9
2.0
1.1
2.0
1.4
2.5
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C)
All Four Quadrants
VGD
0.2
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = "200 mA)
IH
6.0
50
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 ms, Pulse Width = 2 ms)
tgt
1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C)
dv/dt(c)
dv/dt
5.0
100
Unit
°C/W
°C
Unit
mA
mA
V
mA
V
V
mA
ms
V/ms
V/ms
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