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MAC223-10FP Datasheet PDF : 4 Pages
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MAC223FP Series MAC223AFP Series
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Peak Blocking Current(1)
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM
—
—
10
—
—
2
p p Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width 2 ms, Duty Cycle 2%)
VTM
—
1.4
1.85
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
—
20
50
—
30
75
Unit
µA
mA
Volts
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(VD = Rated VDRM, TJ = 125°C, RL = 10 k)
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
VGT
Volts
—
1.1
2
—
1.3
2.5
0.2
0.4
—
0.2
0.4
—
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open)
IH
—
10
50
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
tgt
—
1.5
—
µs
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
dv/dt
—
40
—
V/µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c)
—
5
—
V/µs
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
125
115
105
95
85
75
0
5
10
15
20
25
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
40
30
20
10
0
0
5
10
15
20
25
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
2
Motorola Thyristor Device Data
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