MAAPGM0034-DIE Ver la hoja de datos (PDF) - Tyco Electronics
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MAAPGM0034-DIE Datasheet PDF : 6 Pages
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RO-P-DS-3019 A
0.5W X/Ku-Band Power Amplifier
8.0-12.5 GHz
Preliminary Information
Features
♦ 8.0-12.5 GHz Operation
♦ 0.5 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ Self-Aligned MSAG® MESFET Process
8.0-12.5 GHz GaAs MMIC Amplifier
Primary Applications
♦ Point-to-Point Radio
♦ Weather Radar
♦ Military Radar
Description
The MAAPGM0034-Die is a 2-stage 0.5 W power amplifier
with on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using
M/A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET
Process. This process provides polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 10V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
8.0-12.5
GHz
Output Power
POUT
28
Power Added Efficiency
PAE
35
dBm
%
1-dB Compression Point
P1dB
26
dBm
Small Signal Gain
G
15
dB
Input VSWR
Input VSWR
2:1
Gate Current
Drain Current
Output Third Order Intercept
IGG
IDD
OTOI
<2
< 200
33
mA
mA
dBm
Noise Figure
2nd Harmonic
3rd Harmonic
NF
8
dB
2f
-28
dBc
3f
-35
dBc
1. TB = MMIC Base Temperature
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