MAAP-000076-MCH000 Ver la hoja de datos (PDF) - Tyco Electronics
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Fabricante
MAAP-000076-MCH000 Datasheet PDF : 8 Pages
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Amplifier, Power, 16W
1.3-2.5 GHz
Next Level Assembly Instructions:
MAAP-000076-PED000
Rev —
Preliminary Datasheet
Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die
on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summa-
rized pictorially in Figure 18.
To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy.
Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with
bulk thermal conductivities of 60 and 15 W/m-ºC, respectively. Silver-filled epoxies with conductivities < 10 W/m-ºC
are not recommended for use in attaching these IC assemblies.
DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC
assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE
range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly mate-
rial is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively.
Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly
attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be
maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical at-
tach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and
thereby the MTTF.
The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils
making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band.
This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly
RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal
power transfer. Shorter RF bond wires result in improved RF performance.
In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC
assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC as-
sembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high
number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC
assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC
assembly and mating substrates is recommended.
Wirebonding: Bond @ 160°C using standard ball or thermal compression wedge bond techniques. For DC pad con-
nections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although
ball bonds are also acceptable.
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M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
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whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
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