MA4X714 Ver la hoja de datos (PDF) - Panasonic Corporation
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MA4X714 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA4X714 (MA714)
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
0.65 ± 0.15
2.8
+
−
0.2
0.3
1.5
+
−
0.25
0.05
Unit : mm
0.65 ± 0.15
0.5 R
4
1
I Features
• Two MA3X704As are contained in one package (Two diodes in a
different direction)
• Optimum for low-voltage rectification because of its low forward
rise voltage (VF)
• Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak forward
Single
IFM
150
mA
current
Double*
110
Forward current Single
IF
(DC)
Double*
30
mA
20
Junction temperature
Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
Note) * : Value per chip
2
3
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1P
Internal Connection
4
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1
µA
0.4
V
1.0
V
1.5
pF
1.0
ns
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument Bias Aplication Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
475
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