M81705FP Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M81705FP Datasheet PDF : 8 Pages
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MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=15V, unless otherwise specified)
Symbol
Parameter
Test conditions
IFS
Floating Supply Leakage Current
IBS
VBS Standby Current
ICC
VCC Standby Current
VOH
High Level Output Voltage
VOL
Low Level Output Voltage
VIH
High Level Input Threshold Voltage
VIL
Low Level Input Threshold Voltage
IIH
High Level Input Bias Current
IIL
Low Level Input Bias Current
VBSuvr
VBS Supply UV Reset Voltage
VBSuvh
VBS Supply UV Hysteresis Voltage
tVBSuv
VBS Supply UV Filter Time
IOH
Output High Level Short Circuit Pulsed Current
IOL1
Output Low Level Short Circuit Pulsed Current
IOL2
Output Low Level Short Circuit Pulsed Current
ROH
Output High Level On Resistance
ROL1
Output Low Level On Resistance1
ROL2
Output Low Level On Resistance2
tdLH
High Side Turn-On Propagation Delay
tdHL
High Side Turn-Off Propagation Delay
tr
High Side Turn-On Rise Time
tf
High Side Turn-Off Fall Time
VOth
ROL1/ROL2 Switching Output Voltage
* Typ. is not specified.
VB=VS=600V
IO=0A
IO=0A
VIN=5V
VIN=0V
VO=0V, VIN=0V, PW<10µs
VO=1V, VIN=5V, PW<10µs
VO=15V, VIN=5V, PW<10µs
IO=–100mA, ROH=(VOH-VO)/IO
VO=1V, ROL1=VO/IO
VO=5V, ROL2=VO/IO
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
Min.
—
0.25
0.50
14.9
—
2.5
0.8
–50
–200
10.5
0.2
—
—
—
—
—
—
—
100
100
—
—
1.5
Limits
Typ.*
—
0.50
0.75
—
—
3.0
1.5
–20
–100
11.5
0.5
5
–125
40
150
120
50
100
—
—
220
110
2.5
Max.
Unit
1.0
µA
0.75
mA
1.00
mA
—
V
0.1
V
4.0
V
2.0
V
—
µA
—
µA
12.5
V
0.8
V
—
µs
—
mA
—
mA
—
mA
160
Ω
60
Ω
130
Ω
500
ns
500
ns
—
ns
—
ns
4.0
V
Mar. 2003
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