M63813KP Ver la hoja de datos (PDF) - Mitsumi
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M63813KP Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
VO
Output voltage
Collector current
(Current per 1 cir-
IC
cuit when 7 circuits
are coming on si-
multaneously)
VIN
Input voltage
Test conditions
M63813P
M63813FP
M63813GP
M63813KP
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Limits
Unit
min
typ
max
0
—
35
V
0
—
250
0
—
160
0
—
250
0
—
130
0
—
250
mA
0
—
120
0
—
250
0
—
120
0
—
20
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE(sat)
VIN(on)
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
Limits
Unit
min
typ
max
35
—
—
V
—
—
0.2
V
—
—
0.8
2.4
35
4.2
V
—
1.2
2.0
V
—
—
10
µA
50
—
—
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
125
—
ns
—
250
—
ns
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
Vo
PG
50Ω
Measured device
RL
OPEN
OUTPUT
CL
50%
INPUT
OUTPUT
50%
ton
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 3V
(2)Input-output conditions : RL = 220Ω, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
50%
50%
toff
Jan. 2000
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