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M5M5V416BRT Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
M5M5V416BRT Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
revision-P11, ' 03.01.14
M5M5V416BTP,RT
MITSUBISHI LSIs
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Write cycle (BC control mode)
A 0~17
BC1 ,BC2
tsu (A)
tCW
tsu (BC1) or
tsu (BC2)
trec (W)
S1
S2
W
DQ1~16
(Note3)
(Note3)
(Note5)
(Note3)
(Note4)
tsu (D) th (D)
DATA IN
STABLE
(Note3)
(Note3)
(Note3)
Note 3: Hatching indicates the state is "don't care".
Note 4: A Write occurs during S1 low, S2 high ov erlaps BC1 and/or BC2 low and W low.
Note 5: When the f alling edge of W is simultaneously or prior to the f alling edge of BC1 and/or BC2 or the f alling edge of S1
or rising edge of S2, the outputs are maintained in the high impedance state.
Note 6: Don't apply inv erted phase signal externally when DQ pin is in output mode.
6

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