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M5M5V216ATP Ver la hoja de datos (PDF) - Renesas Electronics

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M5M5V216ATP Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
revision-03, 14.Jan.'03
M5M5V216ATP,RT
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Vcc Supply v oltage
VI
Input v oltage
With respect to GND
With respect to GND
VO Output v oltage
With respect to GND
Pd
Power dissipation
Ta=25ºC
Ratings
-0.5* ~ +4.6
-0.5* ~ Vcc + 0.5
0 ~ Vcc
700
Units
V
mW
Operating
Ta
temperature
I-v ersion (-HI)
- 40 ~ +85
ºC
T stg Storage temperature
- 65 ~ +150
ºC
* -3.0V in case of AC (Pulse width <= 30ns)
DC ELECTRICAL CHARACTERISTICS
( Vcc=2.7 ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Conditions
VIH
VIL
V OH1
V OH2
V OL
II
High-lev el input v oltage
Low-lev el input v oltage
High-level output voltage 1
High-level output voltage 2
Low-lev el output v oltage
Input leakage current
IOH= -0.5mA
IOH= -0.05mA
IOL=2mA
VI =0 ~ Vcc
IO
Icc1
Icc2
Output leakage current
Activ e supply c urrent
( AC,MOS lev el )
Activ e supply c urrent
( AC,TTL lev el )
BC1 and BC2=VIH or S=VIH or OE=VIH, VI/O=0 ~ Vcc
BC1 and BC2 <= 0.2V , S<= 0.2V
other inputs <= 0.2V or => Vcc-0.2V
Output - open (duty 100%)
f = 10MHz
f = 1MHz
BC1 and BC2=VIL , S=V IL
other pins =V IH or VIL
Output - open (duty 100%)
f = 10MHz
f = 1MHz
Icc3
Stand by s upply current
( AC,MOS lev el )
< 1 > S => Vcc - 0.2V,other inputs = 0 ~ Vcc
< 2 > BC1 and BC2 => Vcc - 0.2V
S <= 0.2V Other inputs=0~Vcc
~ +25ºC
~ +40ºC
~ +70ºC
~ +85ºC
Icc4 Stand by s upply current BC1 and BC2=VIH , S=VIL or S=VIH
( AC,TTL lev el ) Other inputs= 0 ~ Vcc
Limits
Min Ty p Max
2.0
Vcc+0.3V
-0.3 *
0.6
2.4
Vcc-0.5V
0.4
±1
±1
-
45 60
-
5
15
-
45 60
-
5
15
-
0.3
2
-
1
5
-
-
10
-
-
30
-
-
0.5
Units
V
µA
mA
µA
mA
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical value is for Vcc=3.0V and Ta=25ºC
* -3.0V in case of AC (Pulse width <= 30ns)
CAPACITANCE
Symbol Parameter
CI
Input capacitance
CO Output capacitance
Conditions
VI=GND, VI=25mVrms, f =1MHz
VO=GND,VO=25mVrms, f =1MHz
(Vcc=2.7 ~ 3.6V, unless otherwise noted)
Limits
Min Ty p Max
8
10
Units
pF
3

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