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M5M5V108DKV-70H Ver la hoja de datos (PDF) - Renesas Electronics

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Fabricante
M5M5V108DKV-70H
Renesas
Renesas Electronics Renesas
M5M5V108DKV-70H Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Write cycle ( S1 control mode)
A0~16
S1
7th.July.2000 Ver. 1.1
MITSUBISHI LSIs
M5M5V108DFP,VP,KV -70H
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
tCW
tsu (A)
tsu (S1)
trec (W)
S2
(Note 5)
(Note 7)
W
(Note 5)
DQ1~8
Write cycle (S2 control mode)
A0~16
(Note 6)
tsu (D)
th (D)
DATA IN
STABLE
tCW
(Note 5)
(Note 5)
S1
S2
W
DQ1~8
(Note 5)
tsu (A)
tsu (S2)
trec (W)
(Note 5)
(Note 7)
(Note 5)
(Note 6)
tsu (D)
th (D)
DATA IN
STABLE
Note 5: Hatching indicates the state is "don't care".
6: Writing is executed while S2 high overlaps S1 and W low.
7: When the falling edge of W is simultaneously or prior to the falling edge of S1
or rising edge of S2, the outputs are maintained in the high impedance state.
8: Don't apply inverted phase signal externally when DQ pin is output mode.
(Note 5)
6

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