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M5M5V416CWG-70HI Ver la hoja de datos (PDF) - Renesas Electronics

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Fabricante
M5M5V416CWG-70HI
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Renesas Electronics Renesas
M5M5V416CWG-70HI Datasheet PDF : 12 Pages
First Prev 11 12
2002.04.18 Ver. 6.0
MITSUBISHI LSIs
M5M5V416CWG -55HI, -70HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Min
Ty p Max Units
Vcc (PD) Power down supply voltage
2.0
V
VI (BC) Byte control input BC1# &
BC2#
2.2V < Vcc(PD)
2.0V < Vcc(PD) < 2.2V
2.2
V
Vcc(PD)
VI (S1)
Chip select input S1#
2.2V < Vcc(PD)
2.0V < Vcc(PD) < 2.2V
2.2
V
Vcc(PD)
VI (S2)
Chip select input S2
Icc (PD)
Power down
supply c urrent
Vcc=2.0V
(1) S1#>Vcc-0.2V,
other inputs = 0 ~ Vcc
(2) S2<0.2V,
other inputs = 0 ~ Vcc
(3) BC1# and BC2#>Vcc-0.2V
S1# < 0.2V, S2 > Vcc - 0.2V
other inputs = 0 ~ Vcc
~ +25°C
~ +40°C
~ +70°C
~ +85°C
0.2
V
-
0.05 0.8
-
0.1 1.5
-
-
7.5
µA
-
-
15
(2) TIMING REQUIREMENTS
Note 7: Typical parameter of Icc(PD) indicates the value for the
center of distribution at 2.0V, and not 100% tested.
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recov ery t ime
Test conditions
Limits
Min Ty p Max
0
5
Units
ns
ms
(3) TIMING DIAGRAM
BC# control mode On the BC# control mode, the lev el of S1# and S2 must be f ixed at S1# , S2 > Vcc-0.2V or S2 < 0.2V.
Vcc
tsu (PD)
2.7V
2.7V
trec (PD)
BC1#
BC2#
2.2V
BC1# , BC2# > Vcc-0.2V
2.2V
S1# control mode On the S1# mode, the lev el of S2 must be f ixed at S2 > Vcc-0.2V or S2 < 0.2V.
Vcc
tsu (PD)
2.7V
2.7V
trec (PD)
S1#
S2 control mode
Vcc
2.2V
S1# > Vcc-0.2V
2.2V
S2
2.7V
tsu (PD)
0.2V
2.7V
trec (PD)
0.2V
S2 < 0.2V
8

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