M5M5W816TP Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M5M5W816TP Datasheet PDF : 9 Pages
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2001.4.11 Ver. 2.0
M5M5W816TP-70HI, 85HI
MITSUBISHI LSIs
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Vcc (PD) Power down supply voltage
VI (BC) Byte control input BC1# & BC2#
Limits
Min
Ty p Max Units
2.0
V
2.0
V
VI (S)
Chip select input S#
2.0
V
Icc (PD)
Power down
supply c urrent
Vcc=2.0V
(1) S# => Vcc - 0.2V,
other inputs = 0 ~ Vcc
(2) BC1# and BC2#=> Vcc - 0.2V
S# <= 0.2V
other inputs = 0 ~ Vcc
~ +25°C
~ +40°C
~ +70°C
~ +85°C
-
0.1 1.5
-
0.2
3
-
-
15
µA
-
-
30
(2) TIMING REQUIREMENTS
Note 2: Typical parameter of Icc(PD) indicates the value for the
center of distribution at 2.0V, and not 100% tested.
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recov ery t ime
Test conditions
Limits
Min Ty p Max
0
5
Units
ns
ms
(3) TIMING DIAGRAM
BC# control mode
Vcc
BC1#
BC2#
2.2V
tsu (PD)
2.7V
2.7V
BC1# , BC2# >= Vcc-0.2V
trec (PD)
2.2V
S# control mode
Vcc
2.2V
S#
tsu (PD)
2.7V
2.7V
S#>= Vcc-0.2V
trec (PD)
2.2V
MITSUBISHI ELECTRIC
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