M5M5V416CWG Ver la hoja de datos (PDF) - Mitsumi
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M5M5V416CWG Datasheet PDF : 10 Pages
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2000.11.22 Ver. 1.0
MITSUBISHI LSIs
M5M5V416CWG -70HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Min
Ty p Max Units
Vcc (PD) Power down supply voltage
2.0
V
VI (BC) Byte control input BC1 & BC2 2.7V Vcc(PD)
2.0V Vcc(PD) 2.7V
2.2
V
Vcc(PD)
VI (S1)
Chip select input S1
2.7V Vcc(PD)
2.0V Vcc(PD) 2.7V
2.2
V
Vcc(PD)
VI (S2)
Chip select input S2
Icc (PD)
Power down
supply c urrent
Vcc=2.0V
(1) S1 => Vcc - 0.2V,
other inputs = 0 ~ Vcc
(2) S2 <= 0.2V,
other inputs = 0 ~ Vcc
(3) BC1 and BC2 =>Vcc - 0.2V
S1<= 0.2V, S2=> Vcc - 0.2V
other inputs = 0 ~ Vcc
~ +25°C
~ +40°C
~ +85°C
0.2
-
0.1 0.8
-
0.2 1.5 µA
-
-
15
(2) TIMING REQUIREMENTS
Note 2: Typical parameter of Icc(PD) indicates the value for the
center of distribution at 2.0V, and not 100% tested.
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recov ery t ime
Test conditions
Limits
Min Ty p Max
0
5
Units
ns
ms
(3) TIMING DIAGRAM
BC control mode
Vcc
tsu (PD)
2.7V
2.7V
trec (PD)
2.2V
BC1
BC2
BC1 , BC2 >= Vcc-0.2V
2.2V
S1 control mode note7 : On the S1 mode, the level of S2 must be fixed at S2 >= Vcc-0.2V or S2 0.2V.
Vcc
tsu (PD)
2.7V
2.7V
trec (PD)
2.2V
S1
S2 control mode
Vcc
S1 >= Vcc-0.2V
2.2V
S2
2.7V
tsu (PD)
0.2V
2.7V
trec (PD)
0.2V
S2 0.2V
MITSUBISHI ELECTRIC
8
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