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M5M5V416BRT

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

Mitsumi 

revision-P04, ' 98.12.16

MITSUBISHI LSIs

M5M5V416BTP,RT

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change

4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

POWER DOWN CHARACTERISTICS

(1) ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

Vcc (PD) Power down supply voltage

VI (BC) Byte control input BC1 & BC2

VI (S1)

Chip select input S1

VI (S2)

Chip select input S2

Vcc=3.0V

-LW, -LI

Icc (PD)

Power down

supply c urrent

1)

BSC1 1<=0a.n2dVBoCr 2S>=2

Vcc-0.2V

>= Vcc-0.2V

other inputs=0~3V

-L, -LW, -LI

-HW, -HI

2)

S1 >=Vcc - 0.2V

other inputs=0~3V

-H, -HW, -HI

3)

S2 0.2V

other inputs=0~3V

-H

-HW

-HI

+70 ~ +85°C

+70°C

+70 ~ +85°C

+40 ~ +70°C

+25 ~ +40°C

0 ~ +25°C

-20 ~ +25°C

-40 ~ +25°C

(2) TIMING REQUIREMENTS

Limits

Min Ty p Max Units

2.0

V

2.0

V

2.0

V

0.2

V

-

- 40 µA

-

- 20 µA

-

- 20 µA

-

- 10 µA

-

1

3 µA

- 0.3 1 µA

- 0.3 1 µA

- 0.3 1 µA

Typical value is for Ta=25°C

Symbol

Parameter

tsu (PD)

trec (PD)

Power down set up time

Power down recov ery t ime

(3) TIMING DIAGRAM

BC control mode

Vcc

Test conditions

Limits

Min Ty p Max

0

5

Units

ns

ms

tsu (PD)

2.7V

2.7V

trec (PD)

BC1

2.2V

BC2

S1 control mode

Vcc

tsu (PD)

BC1 , BC2 >= Vcc - 0.2V

2.7V

2.7V

2.2V

trec (PD)

S1

S2 control mode

Vcc

2.2V

S2

0.2V

S1 >= Vcc - 0.2V

tsu (PD)

2.7V

S2 0.2V

2.7V

2.2V

trec (PD)

0.2V

MITSUBISHI ELECTRIC

8

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